Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits
This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).
Item Type | Article |
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Additional information | © 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. |
Keywords | bandpass filter (bpf), bi-cmos, rfic, microwave, millimeter-wave, miniaturization, on-chip resonator, silicon-germanium (sige), electrical and electronic engineering |
Date Deposited | 15 May 2025 13:51 |
Last Modified | 31 May 2025 00:17 |
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